to ? 92 1.emitter 2.base 3.collector to-92 plastic-encapsulate transistors A94 transistor (pnp) features z high breakdown voltage maximum ratings (t a =25 unless otherwise noted) electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions min typ max unit collector-base breakdown voltage v (br)cbo i c =-100a,i e =0 -400 v collector-emitter breakdown voltage v (br)ceo i c =-1ma,i b =0 -400 v emitter-base breakdown voltage v (br)ebo i e =-100a,i c =0 -5 v collector cut-off current i cbo v cb =-400v,i e =0 -0.1 a collector cut-off current i ceo v ce =-400v,i b =0 -5 a emitter cut-off current i ebo v eb =-4v,i c =0 -0.1 a h fe(1) v ce =-10v, i c =-10ma 80 300 h fe(2) v ce =-10v, i c =-1ma 70 h fe(3) v ce =-10v, i c =-100ma 60 dc current gain h fe(4) v ce =-10v, i c =-50ma 80 v ce(sat)(1) i c =-10ma,i b =-1ma -0.2 v collector-emitter saturation voltage v ce(sat)(2) i c =-50ma,i b =-5ma -0.3 v base-emitter saturation voltage v be(sat) i c =-10ma,i b =-1ma -0.75 v transition frequency f t v ce =-20v, i c =-10ma,f=30mhz 50 mhz classification of h fe(1) rank a b1 b2 c range 80-100 100-150 150-200 200-300 symbol parameter value unit v cbo collector-base voltage -400 v v ceo collector-emitter voltage -400 v v ebo emitter-base voltage -5 v i c collector current & r q w l q x r x v a p c collector power dissipation 625 mw r ja thermal resistance i rom junction w o $ mbient 200 / w t j junction temperature 150 t stg storage temperature -55~+150 i c 0 collector current 3 x o v h g -0 a 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,may,2012
-0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -20 -22 0 2 4 6 8 10 12 14 16 18 0 25 50 75 100 125 150 0 100 200 300 400 500 600 700 -10 -100 50 100 -1 -10 -100 -500 -1000 -1 -10 -100 10 100 1000 -0.1 -1 -10 1 10 100 -1 -10 -100 -0 -2 -4 -6 -8 -10 -12 -14 -16 -18 -0 -300 -600 -900 -1200 -1 -10 -100 common emitter t a =25 100ua 90ua 80ua 70ua 60ua 50ua 40ua 30ua 20ua i b =-10ua collector current i c (ma) collector-emitter voltage v ce (v) i c ?? ambient temperature t a ( ) collector power dissipation p c (mw) p c ?? t a common emitter v ce = -20v t a =25 collector current i c (ma) transition frequency f t (mhz) 10 -5 -200 f t ?? =10 i c v besat ?? t a =25 t a =100 base-emitter saturation voltage v besat (mv) collector current i c (ma) -200 -200 i c i c common emitter v ce = -10v t a =100 t a =25 collector current i c (ma) dc current gain h fe f=1mhz i e =0/i c =0 t a =25 v cb /v eb c ob /c ib ?? capacitance c t (pf) reverse voltage v (v) c ib c ob 300 -20 -200 -10 -1 -0.1 -0.01 A94 h fe ?? =10 i c v cesat ?? t a =100 t a =25 collector current i c (ma) collector-emitter saturation voltage v cesat (v) -100ua -90ua -80ua -70ua -60ua -50ua -40ua -30ua -20ua v ce common emitter v ce =-10v collector current i c (ma) t a = 2 5 t a = 1 0 0 base-emmiter voltage v be (mv) -200 i c ?? v be 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification c,may,2012
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